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DCP11/15
Coating Specification:
- Thickness of diamond coating is about 70nm.
- Diamond coating is doped with nitrogen.
- Film resistivity: 0,5-1 Ohm*cm
- Tip curvature radius after coating is 50-70nm.
- Recommended for electrical modes (such as EFM, SCM, SKM, LAO Lithography, SRM)
Probe specification
- Standard chip size: 1.6x3.6x0.4 mm.
- High cemically stable reflective Au coating (reflective property is 3 times better in comparison with uncoated cantilevers).
- Typical curvature radius of a tip: 10 nm.
- Tip height: 10 - 15 µm.
- Each chip has two RECTANGULAR springs.
- Compatible with the most commercial SPM devices.
- Silicon is doped by boron with the concentration about 5x1020 cm-3 to avoid electrostatic charges.
- Packaged in GelPak® boxes.
GelPak® is a registered trade mark of Vichem Corporation.
| Specification for DCP11 series |
| Chip thickness |
0.4mm |
| Reflective side |
Au |
| Spring number |
2 |
| Aspect ratio |
3:1 |
| Cone angle f |
<=22° |
| Curvature radius of a tip |
typical 10nm | |
 |
|
Available
Cantilever series |
Spring |
Cantilever lenght, L±5µm |
Cantilever width, W±3µm |
Cantilever thickness, µm |
Resonant frequency, kHz |
Force constant, N/m |
|
min |
typical |
max |
min |
typical |
max |
min |
typical |
max |
|
DCP11 |
A |
100 |
35 |
1.7 |
2.0 |
2.3 |
190 |
255 |
325 |
5.5 |
11.5 |
22.5 |
|
B |
130 |
35 |
1.7 |
2.0 |
2.3 |
115 |
150 |
190 |
2.5 |
5.5 |
10 |
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