Surface Patterning using Ion Beams 7x7 nm
Silicon Dioxide (SiO2) sample was irradiated with
accelerated Indium ions of energy 890 keV to a fluence of 3x10^17 ions/cm^2. The energy deposited due to high energy Indium ions on the surface of SiO2 has resulted in such a well ordered pattern formation.
accelerated Indium ions of energy 890 keV to a fluence of 3x10^17 ions/cm^2. The energy deposited due to high energy Indium ions on the surface of SiO2 has resulted in such a well ordered pattern formation.
Author: Mr. P. Santhana Raman
Organization: Indira Gandhi Centre for Atomic Research
Scan size: 7x7 nm
Probes used: NSG10